| PART |
Description |
Maker |
| MH16S64APHB-6 MH16S64APHB-7 MH16S64APHB-8 |
1 /073 /741 /824-BIT (16 /777 /216 - WORD BY 64-BIT)Synchronous DRAM
1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)Synchronous DRAM 1073741824位（16,777,216 -文字4位）同步DRAM
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| M5M29GB161BVP M5M29WT160BVP M5M29GT161BVP M5M29GT1 |
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY 16,777,216位（2097,152 - Word 1048,576字BY16位）的CMOS 3.3只，块擦除闪
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| M6MGB166S4BWG M6MGT166S4BWG M6MGB E99008 |
From old datasheet system
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP
16,777,216-BIT (1,048,576 -WORD BY 16-BIT) CMOS 3.3V-ONLY FLASH MEMORY
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
|
Mitsubishi Electric Semiconductor
|
| MH16S72AVJB-6 |
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M29KE131BTP |
134,217,728-BIT (16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY
|
Renesas Electronics Corporation
|
| MH16D72AKLB-75 |
1,207.959,552-BIT (16,777,216-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
|
Mitsubishi Electric Corporation
|
| HM5116100S-5 |
16,777,216-word x 1-bit Dynamic RAM
|
Hitachi Semiconductor
|
| 75220 |
1.85 by 1.85mm (.073 by .073) Pitch GbX? Module-to-Backplane Connector System In 4- and 5-Pair Columns
|
Molex Electronics Ltd.
|
| THMY721661BEG-10 THMY721661BEG-80 THMY721661BEG |
16/777/216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE
16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE
|
TOSHIBA[Toshiba Semiconductor]
|
| AK59256 |
16,777,216 Word by 9 Bit CMOS Dynamic Random Access Memory
|
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